SIGC144T170R2C edited by infineon technologies ai ps dd hv3, l 7361m , edition 2 , 04.09.2003 igbt chip in npt - technology this chip is used for: chip only features: 1700v npt technology 280m chip short circuit prove positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die si ze package ordering code sigc144t170 r2c 1700v 75a 11.98 x 11.98 mm 2 sawn on foil q67041 - a4696 - a001 mechanical parameter: raster size 11.98 x 11.98 area total / active 143.52 / 113.6 emitter pad size 8 x ( 1.98x2.98 ) gate pad size 0.757 x 1.48 mm 2 thickness 280 m wafer size 150 mm flat position 90 deg max.possible chips per wafer 93 pcs passivation frontside photoimide emitter metalization 3200 nm al si 1% collector metalization 1400 nm ni ag ? system suitable f or epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient te mperature of 23c
SIGC144T170R2C edited by infineon technologies ai ps dd hv3, l 7361m , edition 2 , 04.09.2003 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1700 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 225 a gate emit ter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value parameter symb ol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c =5ma 1700 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =75a 2.2 2.7 3.2 gate - emitter threshold voltage v ge(th) i c =3.3ma , v ge =v ce 4.5 5 .5 6.5 v zero gate voltage collector current i ces v ce =1700v , v ge =0v 18 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 480 na integrated gate resistor r gint 5 w dynamic characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss - 5 - output capacitance c oss - tbd - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - tbd - nf switch ing characteristics (tested at component) , inductive load: value parameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) - 0.1 - rise time t r - 0.1 - turn - off delay time t d(off) - 0.9 - fall time t f t j =125 c v cc =9 00v, i c =75a v ge = 15v, r g =20 w - 0.03 - ns 1) values also influenced by parasitic l - and c - in measurement and package.
SIGC144T170R2C edited by infineon technologies ai ps dd hv3, l 7361m , edition 2 , 04.09.2003 chip drawing:
SIGC144T170R2C edited by infineon technologies ai ps dd hv3, l 7361m , edition 2 , 04.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet chip only description: a ql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 m nchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserv ed. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further informat ion on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components ma y contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of inf ineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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